We are delighted to share that Finwave Semiconductor, Inc. recently attended the 2023 International Microwave Symposium (IMS).
We showcased our cutting-edge semiconductor solutions and demonstrated the unique capabilities and applications of our 3DGaN™. Our PA and RF Switch performance metrics garnered rave reviews from our esteemed customers, analysts, and the press.
We extend our gratitude to the organizers of IMS for hosting a remarkable event, and we would like to thank all the attendees who visited our booth. Your support and interest in our technology is truly appreciated.
Finwave remains dedicated to pushing the boundaries of microwave technology and maintaining our position at the forefront of industry advancements. Looking ahead, we eagerly anticipate seeing everyone again next year in Washington DC for IMS 2024 where we will unveil a wide range of new products leveraging our proprietary 3DGaN™.
Stay tuned. There is more to come.
Founded in 2012, Finwave Semiconductor is shaping the future through a new breakthrough transistor designed to optimize the potential of Gallium Nitride (GaN). Finwave’s advanced 3DGaN technology is the discovery of prominent MIT innovators who are focused on bringing the true potential of GaN to key industries including 5G, AI, cloud computing, and EV and autonomous vehicles.
Finwave is the creator of the world’s first 8” GaN insulating gate FinFET processed in a Si CMOS fab. The company’s proven, award-winning, breakthrough GaN FinFET technology, and its 3D fin transistor structure, is the result of more than 100 years of combined cutting-edge research. Finwave has offices in Massachusetts and California, as well as partners worldwide. For more information, visit www.finwavesemi.com.
Stephanie Olsen
Lages & Associates
(949) 453-8080
stephanie@lages.com
