Finwave's revolutionary 3DGaNTM architecture is designed to dramatically enhance 5G devices with up to:
It has a 100x faster data rate than 4G with 1000x more capacity and ultra low latency.
Even the best new 5G phones suffer from more than 10x lower radio output power than what is needed for sufficient uplink connectivity. The 5G RF chips also suffer from extremely poor power efficiency.
Finwave’s patented approach for linearizing both power amplifiers (PAs) and low noise amplifiers (LNAs) at the device level allows more than 10dB higher linearity than the conventional technologies.
Finwave’s 3DGaN FinFET technology is built on 8” GaN-on-Si wafers using standard silicon foundry tools. 12” is on the horizon for even more aggressive device scaling.
There has been considerable work done in laying the groundwork for 6G, which is widely envisioned to push frequencies above 100GHz — Deeply scaled 3DGaN FinFETs are extremely compelling for 6G applications.