Founded in 2012, Finwave Semiconductor is shaping the future through a new breakthrough transistor designed to optimize the potential of Gallium Nitride (GaN). Finwave’s advanced 3DGaN technology is the discovery of prominent MIT innovators who are focused on bringing the true potential of GaN to key industries including 5G, AI, cloud computing, and EV and autonomous vehicles.
Finwave is the creator of the world’s first 8” GaN insulating gate FinFET processed in a Si CMOS fab. The company’s proven, award-winning, breakthrough GaN FinFET technology, and its 3D fin transistor structure, is the result of more than 100 years of combined cutting-edge research. Finwave has offices in Massachusetts and California, as well as partners worldwide. For more information, visit www.finwavesemi.com.
Stephanie Olsen
Lages & Associates
(949) 453-8080
stephanie@lages.com
