Headquarters: Waltham, Mass.
CEO: Bin Lu
Funding: The Series A funding round of $12.2 million follows a $4.3 million grant from the U.S. Department of Energy Advanced Research Projects Agency.
Investors: The round was led by Fine Structure Ventures with participation from Citta Capital, Soitec, Safar Partners and Alumni Ventures.
What company does: Finwave Semiconductor, which recently emerged from stealth mode, develops breakthrough 3DGaN transistor technology that’s designed to optimize the potential of Gallium Nitride. The company is applying the 3DGaN technology to improve the performance of 5G devices.
CEO Quote: “Finwave was founded with the mission to scale [GaN FinFET] technology from lab to high-volume products that benefit society, and 5G presents the perfect market opportunity for the scale, performance gains and cost advantages this technology brings. Having solved numerous manufacturing challenges and successfully created a fabrication process using standard 8-inch Si CMOS tools, Finwave is leading the way in commercializing the 3DGaN technology for 5G.”
Founded in 2012, Finwave Semiconductor is shaping the future through a new breakthrough transistor designed to optimize the potential of Gallium Nitride (GaN). Finwave’s advanced 3DGaN technology is the discovery of prominent MIT innovators who are focused on bringing the true potential of GaN to key industries including 5G, AI, cloud computing, and EV and autonomous vehicles.
Finwave is the creator of the world’s first 8” GaN insulating gate FinFET processed in a Si CMOS fab. The company’s proven, award-winning, breakthrough GaN FinFET technology, and its 3D fin transistor structure, is the result of more than 100 years of combined cutting-edge research. Finwave has offices in Massachusetts and California, as well as partners worldwide. For more information, visit www.finwavesemi.com.
Lages & Associates